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Electronic Information – Jingtongxin Technology https://www.ic-jtx.com Electronic Component Thu, 07 Dec 2023 05:09:52 +0000 en-US hourly 1 https://wordpress.org/?v=6.7.1 https://www.ic-jtx.com/wp-content/uploads/2022/08/cropped-深圳市晶通芯科技有限公司_画板-1-32x32.png Electronic Information – Jingtongxin Technology https://www.ic-jtx.com 32 32 ST Series STM32F767VGT6 Arm Cortex-M7 MCU with 1 Mbyte of Flash memory https://www.ic-jtx.com/st-series-stm32f767vgt6-arm-cortex-m7-mcu-with-1-mbyte-of-flash-memory/ Thu, 07 Dec 2023 05:09:52 +0000 https://www.ic-jtx.com/?p=1316 ST Series STM32F767VGT6 STM32 High Performance MCUs

YOUTUBE Address:

The STM32F765xx, STM32F767xx, STM32F768Ax, and STM32F769xx devices are based on the high-performance Arm® Cortex®-M7 32-bit RISC core operating at up to 216 MHz frequency. The Cortex®-M7 core features a floating point unit (FPU), which supports Arm® double-precision and single-precision data-processing instructions and data types. It also implements a full set of DSP instructions and a memory protection unit (MPU), which enhances the application security.

The STM32F765xx, STM32F767xx, STM32F768Ax, and STM32F769xx devices incorporate high-speed embedded memories with a flash up to 2 Mbytes, 512 Kbytes of SRAM (including 128 Kbytes of Data TCM RAM for critical real-time data), 16 Kbytes of instruction TCM RAM (for critical real-time routines), 4 Kbytes of backup SRAM available in the lowest power modes, and an extensive range of enhanced I/Os and peripherals connected to two APB buses, two AHB buses, a 32-bit multi-AHB bus matrix, and a multi layer AXI interconnect supporting internal and external memories access.

The devices offer three 12-bit ADCs, two DACs, a low-power RTC, twelve general-purpose 16-bit timers including two PWM timers for motor control, two general-purpose 32-bit timers, a true random number generator (RNG). They also feature standard and advanced communication interfaces:

– Up to four I2Cs

– Six SPIs, three I2Ss in half-duplex mode. To achieve audio class accuracy, the I2S peripherals can be clocked via a dedicated internal audio PLL or via an external clock to allow synchronization.

– Four USARTs plus four UARTs

– An USB OTG full-speed and a USB OTG high-speed with full-speed capability (with the ULPI)

– Three CANs

– Two SAI serial audio interfaces

– Two SDMMC host interfaces

– Ethernet and camera interfaces

– LCD-TFT display controller

– Chrom-ART Accelerator

– SPDIFRX interface

– HDMI-CEC

Advanced peripherals include two SDMMC interfaces, a flexible memory control (FMC) interface, a Quad-SPI Flash memory interface, a camera interface for CMOS sensors.

The STM32F765xx, STM32F767xx, STM32F768Ax, and STM32F769xx devices operate in the –40 to +105 °C temperature range from a 1.7 to 3.6 V power supply. Dedicated supply inputs for USB (OTG_FS and OTG_HS) and SDMMC2 (clock, command and 4-bit data) are available on all the packages except LQFP100 for a greater power supply choice.

The supply voltage can drop to 1.7 V with the use of an external power supply supervisor. A comprehensive set of power-saving mode allows the design of low-power applications.

The STM32F765xx, STM32F767xx, STM32F768Ax, and STM32F769xx devices offer devices in 11 packages ranging from 100 pins to 216 pins. The set of included peripherals changes with the device chosen.

These features make the STM32F765xx, STM32F767xx, STM32F768Ax, and STM32F769xx microcontrollers suitable for a wide range of applications:

– Motor drive and application control

– Medical equipment

– Industrial applications: PLC, inverters, circuit breakers

– Printers, and scanners

– Alarm systems, video intercom, and HVAC

– Home audio appliances

– Mobile applications, Internet of Things

– Wearable devices: smartwatches

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ST Series STM32F105RBT6 ARM® 32-bit Cortex®-M3 CPU https://www.ic-jtx.com/stm32f105rbt6-arm-32-bit-cortex-m3-cpu/ Thu, 09 Nov 2023 03:37:20 +0000 https://www.ic-jtx.com/?p=1277 ST Series STM32F105RBT6 STM32 32-bit Arm Cortex MCUs, Mainstream Connectivity line, Arm Cortex-M3 MCU with 128 Kbytes of Flash memory, 72 MHz CPU, CAN, USB 2.0 OTG, Connectivity line family operates in the –40 to +105 °C temperature range, from a 2.0 to 3.6 V power supply.

#stm #stm32 #stmicroelectronics #cortex #mcu #dsp #fpga #bga #semiconductor #microcontrollers #microprocessor #oem #odm #ic #icchips #integratedcircuit #pcb #flash #electronics #electroniccomponent

We company official website: www.ic-jtx.com Welcome contact to us, My email: Alan@ic-jtx.com

 

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ST mass-produces e-mode PowerGaN HEMT device https://www.ic-jtx.com/st-mass-produces-e-mode-powergan-hemt-device/ Tue, 18 Jul 2023 03:31:21 +0000 https://www.ic-jtx.com/?p=1250 ST has started volume production of e-mode PowerGaN HEMT devices to simplify the design of high-efficiency power conversion systems. STPOWER GaN transistors improve the performance of applications such as wall adapters, chargers, lighting systems, industrial power supplies, renewable energy applications, and vehicle electrification.
The first two members of the series, the SGT120R65AL and SGT65R65AL, are industrial grade 650V normally-off G-HEMTs housed in a PowerFLAT 5×6 HV surface mount package. They are rated at 15A and 25A, respectively, and have typical on-resistance (R DS(on) ) of 75mΩ and 49mΩ at 25°C, respectively.

Additionally, total gate charge of 3nC and 5.4nC and low parasitic capacitance ensure minimal turn-on/turn-off energy loss. Kelvin source connections allow for optimized gate drive. In addition to reducing the size and weight of power supplies and adapters, the two new GaN transistors offer higher efficiency, cooler operating temperatures and longer lifetimes.

In the coming months, ST will introduce new PowerGaN variants, automotive-qualified devices, and other power packaging options, including the PowerFLAT 8×8 DSC and LFPAK 12×12 for high-power applications.

ST’s G-HEMT devices facilitate the transition to GaN wide bandgap technology in power conversion. GaN transistors with the same breakdown voltage and R DS(on) as silicon alternatives can achieve lower total gate charge and parasitic capacitance, and zero reverse recovery charge.

These features increase efficiency and enhance switching performance, allowing for higher switching frequencies, which in turn allows smaller passive components, thereby increasing power density. As a result, applications can become smaller and more performant. In the future, GaN is expected to enable new power conversion topologies, further improving efficiency and reducing power loss.

ST has high production capacity of PowerGaN discrete products to meet customers’ needs for rapid volume production.

SGT120R65AL and SGT65R65AL with PowerFLAT 5×6 HV are available now, order and inquiry can be sent to Email: Info@ic-jtx.com

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Power tool evaluation boards from ST and Wurth https://www.ic-jtx.com/power-tool-evaluation-boards-from-st-and-wurth/ Wed, 05 Jul 2023 04:19:09 +0000 https://www.ic-jtx.com/?p=1234 Würth Elektronik and STMicroelectronics are jointly developing a power tool circuit for brushless DC motors.
ST provided the STM32G4 (Cortex-M4) MCU, STDRIVE101 gate drivers and 6 STL220N6F7 MOSFETs etc., then Wirth provided the LHMI power inductors and CBF ferrite EMI suppression beads.

The MCU software was developed using ST’s X-CUBE-MCSDK motor control development kit.
Specifications include operating current up to 20A from 12 to 24Vdc (36V for 8S cells after resistance change) output RMS current up to 20 AMP.

With the default sensorless three-shunt vector (field oriented control) algorithm, sensor or sensorless operation is possible, torque or speed modes can be used, and the drive dynamics can be adjusted together with other parameters such as switching frequency.

Protections include overcurrent, undervoltage lockout, and thermal shutdown.

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Overview of Industrial and Consumer Chips https://www.ic-jtx.com/overview-of-industrial-and-consumer-chips/ Fri, 30 Jun 2023 04:59:31 +0000 https://www.ic-jtx.com/?p=1200 Semiconductor capex will grow by 35% in 2021 and 15% in 2022, with the biggest cuts coming from memory companies, which will drop by 19%. SK Hynix’s capex will drop by 50%, and Micron’s capex will drop by 42%. Samsung’s capex will only increase by 5% in 2022, but will remain roughly the same in 2023. Foundries will cut capex by 11% in 2023, led by TSMC with a 12% cut. Among major IDM vendors, Intel plans to cut prices by 19%. TI, ST and Infineon will increase capital expenditures in 2023 against the trend.

Companies that slash capital expenditures are typically associated with the PC and smartphone markets, which are set to slump in 2023.

 

 

IDC forecast in June that PC shipments would drop 14% in 2023 and smartphone shipments would drop 3.2%. The downturn in PCs has largely affected Intel and memory companies. The weakness in smartphones mainly affects TSMC (Apple and Qualcomm are two of its largest customers) and memory companies. IDMs (TI, ST and Infineon) with increased capex in 2023 are more closely linked to the automotive and industrial markets, which are still healthy.

In 2023, the top three spenders (Samsung, TSMC, and Intel) will account for approximately 60% of total semiconductor capex.

Years of high growth in semiconductor capex tend to be years of peak growth in each cycle of the semiconductor market.
The chart below shows the annual change in semiconductor capex (green bar on the left scale) and the annual change in the semiconductor market (blue line on the right scale).

Since 1984, every significant peak in semiconductor market growth (20% or more) has been matched by a significant peak in capital spending growth.

In almost all cases, a significant slowdown or decline in the semiconductor market within a year of the peak leads to a decline in capital expenditures within a year or two of the peak. The 1988 peak was an exception, and capex did not fall the following year, but was flat for two years after the peak.


This pattern has exacerbated volatility in the semiconductor market. In good years, companies aggressively increase capital expenditures to increase production. When the boom crashes, companies cut capital expenditures.

This pattern often leads to excess capacity that follows boom times. This excess capacity could lead to lower prices and further exacerbate the market downturn.

A more logical approach would be to steadily increase capex each year based on long-term capacity needs.

However, this approach can be difficult to convince shareholders. Strong capex growth in good years is usually supported by shareholders. But sustained capex growth in a weak year will not.

Since 1980, semiconductor capex has accounted for an average of 23 percent of the semiconductor market. However, that percentage ranged from 12% to 34% per year, and from 18% to 29% on a five-year average.

The 5-year average shows a cyclical trend. The first 5-year average peak was in 1985 at 28%. The semiconductor market fell 17% in 1985, the largest decline on record at the time. The five-year average rate then declined for nine consecutive years.

The average eventually returned to its peak of 29% in 2000. In 2001, the market experienced its worst decline ever, at 32%. The 5-year average has since declined for 12 consecutive years, reaching a low of 18% in 2012.

Since then, the average has been rising and will reach 27% by 2022. Based on the 2023 forecast, Semiconductor Intelligence expects this average to increase to 29% in 2023.

2023 will be another major downturn for the semiconductor market. Semiconductor Intelligence predicts a 15% drop.

Others forecast a drop as low as 20%. Could this be the start of another decline in capex relative to the market?

History suggests this will be the likely outcome. A severe downturn in the semiconductor industry tends to scare companies into slowing capital expenditures.
The factors behind capital expenditure decisions are complex. Because fabs currently take two to three years to build, companies must forecast capacity needs for years to come.

Foundries account for about 30% of total capex. Foundries must plan their fabs based on estimates of their customers’ capacity needs over the next few years.

The cost of building a new large fab can run as high as $10 billion or more, making it a risky proposition. However, based on past trends, capital expenditures in the industry are likely to be lower than those in the semiconductor market in the coming years.

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Global semiconductor sales increased by 18.0% in May 2022, with a surge of nearly 40% in the Americas https://www.ic-jtx.com/global-semiconductor-sales/ https://www.ic-jtx.com/global-semiconductor-sales/#respond Wed, 06 Jul 2022 05:44:08 +0000 http://www.ic-jtx.com/?p=1

On July 5, the Semiconductor Industry Association (SIA) announced that global semiconductor industry sales in May 2022 were $51.8 billion, an increase of 18.0% from $43.9 billion in May 2021 and an increase of 1.8% from April 2022 totaling 509 One hundred million U.S. dollars. Monthly sales are compiled by the World Semiconductor Trade Statistics (WSTS) organization and represent a three-month moving average. SIA represents 99 percent of the U.S. semiconductor industry’s revenue and nearly two-thirds of non-U.S. chip companies.
Global demand for semiconductors remained high in May, with strong year-over-year sales growth in all major regional markets and product categories,” said John Neuffer, SIA President and CEO. more chip research, design, and manufacturing in 2018. We urge leaders in Washington to quickly enact bipartisan innovation and competitiveness legislation to ensure that a significant portion of chip production and innovation occurs stateside. The clock is ticking. “Compared to April 2021, sales increased in the Americas (36.9%), Japan (19.8%), Europe (16.1%), Asia Pacific/All other regions (15.8%) and China (9.1%). Monthly sales increased in Japan (3.9%), Americas (2.9%), China (1.7%) and Asia Pacific/All Others (1.1%), but declined slightly in Europe (-0.7%).

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