ST – Jingtongxin Technology

ST Series STM32F105RBT6 ARM® 32-bit Cortex®-M3 CPU

ic-jtx — Thu, 09 Nov 2023 03:37:20 +0000

ST Series STM32F105RBT6 STM32 32-bit Arm Cortex MCUs, Mainstream Connectivity line, Arm Cortex-M3 MCU with 128 Kbytes of Flash memory, 72 MHz CPU, CAN, USB 2.0 OTG, Connectivity line family operates in the –40 to +105 °C temperature range, from a 2.0 to 3.6 V power supply.

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ST mass-produces e-mode PowerGaN HEMT device

ic-jtx — Tue, 18 Jul 2023 03:31:21 +0000

ST has started volume production of e-mode PowerGaN HEMT devices to simplify the design of high-efficiency power conversion systems. STPOWER GaN transistors improve the performance of applications such as wall adapters, chargers, lighting systems, industrial power supplies, renewable energy applications, and vehicle electrification.
The first two members of the series, the SGT120R65AL and SGT65R65AL, are industrial grade 650V normally-off G-HEMTs housed in a PowerFLAT 5×6 HV surface mount package. They are rated at 15A and 25A, respectively, and have typical on-resistance (R DS(on) ) of 75mΩ and 49mΩ at 25°C, respectively.

Additionally, total gate charge of 3nC and 5.4nC and low parasitic capacitance ensure minimal turn-on/turn-off energy loss. Kelvin source connections allow for optimized gate drive. In addition to reducing the size and weight of power supplies and adapters, the two new GaN transistors offer higher efficiency, cooler operating temperatures and longer lifetimes.

In the coming months, ST will introduce new PowerGaN variants, automotive-qualified devices, and other power packaging options, including the PowerFLAT 8×8 DSC and LFPAK 12×12 for high-power applications.

ST’s G-HEMT devices facilitate the transition to GaN wide bandgap technology in power conversion. GaN transistors with the same breakdown voltage and R DS(on) as silicon alternatives can achieve lower total gate charge and parasitic capacitance, and zero reverse recovery charge.

These features increase efficiency and enhance switching performance, allowing for higher switching frequencies, which in turn allows smaller passive components, thereby increasing power density. As a result, applications can become smaller and more performant. In the future, GaN is expected to enable new power conversion topologies, further improving efficiency and reducing power loss.

ST has high production capacity of PowerGaN discrete products to meet customers’ needs for rapid volume production.

SGT120R65AL and SGT65R65AL with PowerFLAT 5×6 HV are available now, order and inquiry can be sent to Email: Info@ic-jtx.com

Power tool evaluation boards from ST and Wurth

ic-jtx — Wed, 05 Jul 2023 04:19:09 +0000

Würth Elektronik and STMicroelectronics are jointly developing a power tool circuit for brushless DC motors.
ST provided the STM32G4 (Cortex-M4) MCU, STDRIVE101 gate drivers and 6 STL220N6F7 MOSFETs etc., then Wirth provided the LHMI power inductors and CBF ferrite EMI suppression beads.

The MCU software was developed using ST’s X-CUBE-MCSDK motor control development kit.
Specifications include operating current up to 20A from 12 to 24Vdc (36V for 8S cells after resistance change) output RMS current up to 20 AMP.

With the default sensorless three-shunt vector (field oriented control) algorithm, sensor or sensorless operation is possible, torque or speed modes can be used, and the drive dynamics can be adjusted together with other parameters such as switching frequency.

Protections include overcurrent, undervoltage lockout, and thermal shutdown.