Nexperia has announced the expansion of packaging options for its NextPower 80/100 V MOSFET portfolio, previously available only in the LFPAK56E package, and now also in the LFPAK56 and LFPAK88 packages. These devices are designed to combine high efficiency with reduced spike behavior in telecom, server computing, industrial, power supply, fast charging, USB-PD, and motor control applications. The Qg*RDSon figure of merit has long been a focus for semiconductor manufacturers aiming to improve the efficiency of MOSFET switches.
Pushing that number lower, however, has an unintended consequence: increased spike levels when the MOSFET is turned on or off, increasing the amount of electromagnetic interference (EMI) generated.
Once it was determined that this was an emerging problem, Nexperia began investigating how other process technology parameters could be modified to help resolve the issue.
These efforts culminated in Nexperia releasing NextPower 80/100 V MOSFETs with lower Q rr (reverse recovery charge), allowing them to significantly reduce the amount of spikes during switching transitions while exhibiting the same high efficiency performance as competing MOSFETs, But EMI is lower.
By offering these high-efficiency, low-spike NextPower 80/100 V MOSFETs in the LFPAK56 and LFPAK88, Nexperia not only enables designers to shrink their application size and benefit from the enhanced robustness of the copper clip package, but also provides design engineers with new and customers looking to find additional sources for their existing designs.